Hochschulschrift

Simulation of single electron devices

to connected objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

ISBN: 9783896495419
3896495410

Dimensions: 21 cm

Extent: XI, 149 S.

Language: Englisch

Notes: Ill., graph. Darst.
Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2000

Bibliographic citation: Series in microelectronics ; Vol. 91

Keyword: Heterostruktur
Einelektronen-Tunneleffekt
Transistor
Simulation

Event: Veröffentlichung

(where): Konstanz

(who): Hartung-Gorre

(when): 2000

Creator: Scholze, Andreas

Table of contents: https://d-nb.info/958876185/04

Rights: Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.

Last update: 11.03.2025, 12:17 PM CET

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Object type

Hochschulschrift

Associated

Scholze, Andreas
Hartung-Gorre

Time of origin

2000

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Simulation of single electron devices

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Other Objects (12)

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Simulation of carrier generation in advanced silicon devices

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Scattering in nanoscale devices

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