Defect spectroscopy on 23 GeV proton-irradiated CZ pad diodes

Abstract: This study focuses on investigating radiation-induced defects in CZ p-type silicon pad diodes by subjecting them to irradiation with 23GeV protons at various fluences.
Two different diode thicknesses were used: 100μm and 350μm. The irradiation fluences applied were 1E+13, 7E+13, and 4E+14p/cm2.
The macroscopic (IV & CV) and microscopic (TSC) radiation-induced changes in the sensors were measured and analyzed.
The presented results include IV and CV measurements taken before and after irradiation, as well as the determination of defect concentrations and defect introduction rates through TSC measurements, utilizing electrical and optical filling techniques.
Additionally, the presence of a not yet understood negative peak spectrum observed in TSC measurements will be reported

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Event
Veröffentlichung
(where)
Freiburg
(who)
Universität
(when)
2023
Creator
Sorgenfrei, Niels
Fretwurst, Eckhart
Gurimskaya, Yana
Himmerlich, Anja
Liao, Chuan
Moll, Michael
Pintilie, Ioana
Schwandt, Jörn
Wiehe, Moritz

DOI
10.6094/UNIFR/237241
URN
urn:nbn:de:bsz:25-freidok-2372412
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
25.03.2025, 1:48 PM CET

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Associated

Time of origin

  • 2023

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