Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
2041-1723
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor ; volume:13 ; number:1 ; day:17 ; month:11 ; year:2022 ; pages:1-9 ; date:12.2022
Nature Communications ; 13, Heft 1 (17.11.2022), 1-9, 12.2022
- Klassifikation
-
Elektrotechnik, Elektronik
- Urheber
-
Simon, Maik
Mulaosmanovic, Halid
Sessi, Violetta
Drescher, Maximilian
Bhattacharjee, Niladri
Slesazeck, Stefan
Wiatr, Maciej
Mikolajick, Thomas
Trommer, Jens
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41467-022-34533-w
- URN
-
urn:nbn:de:101:1-2023013021045911270646
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:27 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Simon, Maik
- Mulaosmanovic, Halid
- Sessi, Violetta
- Drescher, Maximilian
- Bhattacharjee, Niladri
- Slesazeck, Stefan
- Wiatr, Maciej
- Mikolajick, Thomas
- Trommer, Jens
- SpringerLink (Online service)
Ähnliche Objekte (12)
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Nanoscale Material Characterization of Silicon Nanowires for Application in Reconfigurable Nanowire Transistors
Top-down fabrication of reconfigurable nanowire-electronics
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Reconfigurable Si Nanowire Nonvolatile Transistors
Analytical Exploration and Quantification of Nanowire-based Reconfigurable Digital Circuits
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Nanoscale Material Characterization of Silicon Nanowires for Application in Reconfigurable Nanowire Transistors
Top-down fabrication of reconfigurable nanowire-electronics
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Reconfigurable Si Nanowire Nonvolatile Transistors
Analytical Exploration and Quantification of Nanowire-based Reconfigurable Digital Circuits
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors
Nanoscale Material Characterization of Silicon Nanowires for Application in Reconfigurable Nanowire Transistors
Top-down fabrication of reconfigurable nanowire-electronics
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Reconfigurable Si Nanowire Nonvolatile Transistors
Analytical Exploration and Quantification of Nanowire-based Reconfigurable Digital Circuits
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications