Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode ; volume:7 ; number:1 ; day:14 ; month:2 ; year:2012 ; pages:1-5 ; date:12.2012
Nanoscale research letters ; 7, Heft 1 (14.2.2012), 1-5, 12.2012

Creator
Tian, Haitao
Wang, Lu
Shi, Zhenwu
Gao, Huaiju
Zhang, Shuhui
Wang, Wenxin
Chen, Hong
Contributor
SpringerLink (Online service)

DOI
10.1186/1556-276X-7-128
URN
urn:nbn:de:101:1-2021082120584677106205
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:54 AM CEST

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Associated

  • Tian, Haitao
  • Wang, Lu
  • Shi, Zhenwu
  • Gao, Huaiju
  • Zhang, Shuhui
  • Wang, Wenxin
  • Chen, Hong
  • SpringerLink (Online service)

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