Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany / Preu, Ralf (Hrsg.). - Amsterdam : Elsevier, 2017. - (Energy Procedia ; 124). - S. 180-187. - eISSN 1876-6102
In: 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3. Apr 2017 - 5. Apr 2017, Freiburg
- Classification
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Physik
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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Bibliothek der Universität Konstanz
- (when)
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2017
- Creator
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Steffens, Jonathan
Becker, Hans–Werner
Gerke, Sebastian
Joos, Sebastian
Hahn, Giso
Terheiden, Barbara
- URN
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urn:nbn:de:bsz:352-2-hznikf30885l7
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:03 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Steffens, Jonathan
- Becker, Hans–Werner
- Gerke, Sebastian
- Joos, Sebastian
- Hahn, Giso
- Terheiden, Barbara
- Bibliothek der Universität Konstanz
Time of origin
- 2017
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On the characteristics of the doping profile under local metal contacts
Injection in light beam induced current systems : An analytical model
Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers
Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon
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