High‐Performance Flexible MoS 2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes (Adv. Electron. Mater. 12/2023)

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
High‐Performance Flexible MoS 2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes (Adv. Electron. Mater. 12/2023) ; volume:9 ; number:12 ; year:2023 ; extent:1
Advanced electronic materials ; 9, Heft 12 (2023) (gesamt 1)

Creator
Yang, Hui
Chen, Xi
Wu, Dongping
Fang, Xiaosheng

DOI
10.1002/aelm.202370056
URN
urn:nbn:de:101:1-2023121114373525899779
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:28 AM CEST

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