High‐Performance Flexible MoS 2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes (Adv. Electron. Mater. 12/2023)
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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High‐Performance Flexible MoS 2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes (Adv. Electron. Mater. 12/2023) ; volume:9 ; number:12 ; year:2023 ; extent:1
Advanced electronic materials ; 9, Heft 12 (2023) (gesamt 1)
- Creator
- DOI
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10.1002/aelm.202370056
- URN
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urn:nbn:de:101:1-2023121114373525899779
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:28 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Yang, Hui
- Chen, Xi
- Wu, Dongping
- Fang, Xiaosheng