High‐Performance Flexible MoS 2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
High‐Performance Flexible MoS 2 Transistors Using Au/Cr/Al/Au as Source/Drain Electrodes ; day:29 ; month:08 ; year:2023 ; extent:9
Advanced electronic materials ; (29.08.2023) (gesamt 9)

Creator
Yang, Hui
Chen, Xi
Wu, Dongping
Fang, Xiaosheng

DOI
10.1002/aelm.202300277
URN
urn:nbn:de:101:1-2023083015072363765935
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:58 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Associated

Other Objects (12)