Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices ; volume:5 ; number:10 ; year:2019 ; extent:9
Advanced electronic materials ; 5, Heft 10 (2019) (gesamt 9)
- Urheber
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Petzold, Stefan
Zintler, Alexander
Eilhardt, Robert
Piros, Eszter
Kaiser, Nico
Sharath, Sankaramangalam Ulhas
Vogel, Tobias
Major, Márton
McKenna, Keith
Molina-Luna, Leopoldo
Alff, Lambert
- DOI
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10.1002/aelm.201900484
- URN
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urn:nbn:de:101:1-2022080613152471942853
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:30 MESZ
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Beteiligte
- Petzold, Stefan
- Zintler, Alexander
- Eilhardt, Robert
- Piros, Eszter
- Kaiser, Nico
- Sharath, Sankaramangalam Ulhas
- Vogel, Tobias
- Major, Márton
- McKenna, Keith
- Molina-Luna, Leopoldo
- Alff, Lambert
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