Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices ; volume:5 ; number:10 ; year:2019 ; extent:9
Advanced electronic materials ; 5, Heft 10 (2019) (gesamt 9)
- Creator
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Petzold, Stefan
Zintler, Alexander
Eilhardt, Robert
Piros, Eszter
Kaiser, Nico
Sharath, Sankaramangalam Ulhas
Vogel, Tobias
Major, Márton
McKenna, Keith
Molina-Luna, Leopoldo
Alff, Lambert
- DOI
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10.1002/aelm.201900484
- URN
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urn:nbn:de:101:1-2022080613152471942853
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:30 AM CEST
Data provider
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Associated
- Petzold, Stefan
- Zintler, Alexander
- Eilhardt, Robert
- Piros, Eszter
- Kaiser, Nico
- Sharath, Sankaramangalam Ulhas
- Vogel, Tobias
- Major, Márton
- McKenna, Keith
- Molina-Luna, Leopoldo
- Alff, Lambert
Other Objects (12)
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Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
Forming-free bipolar resistive switching in nonstoichiometric ceria films
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
Das Hafnium
Das Element Hafnium
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Forming‐Free Resistive Switching Memory Crosspoint Arrays for In‐Memory Machine Learning
Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
Hafnium
Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
Forming-free bipolar resistive switching in nonstoichiometric ceria films
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
Das Hafnium
Das Element Hafnium
High-throughput design of functional-engineered MXene transistors with low-resistive contacts
Forming‐Free Resistive Switching Memory Crosspoint Arrays for In‐Memory Machine Learning
Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
Hafnium
Oxygen engineered hafnium oxide thin films grown by reactive beam epitaxy
Forming-free bipolar resistive switching in nonstoichiometric ceria films
Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy
Das Hafnium
Das Element Hafnium
High-throughput design of functional-engineered MXene transistors with low-resistive contacts
Forming‐Free Resistive Switching Memory Crosspoint Arrays for In‐Memory Machine Learning