Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1432-0630
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
-
Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices ; volume:128 ; number:8 ; day:13 ; month:7 ; year:2022 ; pages:1-9 ; date:8.2022
Applied physics / A. A, Materials science & processing ; 128, Heft 8 (13.7.2022), 1-9, 8.2022
- Urheber
-
Wang, Zeheng
Li, Liang
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1007/s00339-022-05824-2
- URN
-
urn:nbn:de:101:1-2022111209243723142279
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:26 MESZ
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Beteiligte
- Wang, Zeheng
- Li, Liang
- SpringerLink (Online service)
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