- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Wang, Li; Dimitrijev, Sima; Fissel, Andreas; Walker, Glenn; Chai, Jessica et al.: Growth mechanism for alternating supply epitaxy. In: RSC Advances 6 (2016), Nr. 20, S. 16662-16667. DOI: http://dx.doi.org/10.1039/C5RA24797G
- Event
-
Veröffentlichung
- (where)
-
Hannover, Hannover
- (who)
-
Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
- (when)
-
2016
- DOI
-
10.15488/806
- URN
-
urn:nbn:de:101:1-2020060306290871165175
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:49 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
Time of origin
- 2016
Other Objects (12)
Molecular Beam Epitaxy Growth of Topological Materials
Niederlande.- Amsterdam.- International Conference on Vapour Growth and Epitaxy
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Pseudo halide vapor phase epitaxy growth of GaN crystals
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Growth processes and surface phase equilibria in molecular beam epitaxy
Growth kinetics of silicon films deposited by molecular beam epitaxy
Alternating current technology
Molecular beam epitaxy
Epitaxy of nanostructures
Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy
Growth of graphene/hexagonal boron nitride heterostructures using molecular beam epitaxy
Molecular Beam Epitaxy Growth of Topological Materials
Niederlande.- Amsterdam.- International Conference on Vapour Growth and Epitaxy
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Pseudo halide vapor phase epitaxy growth of GaN crystals
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Growth processes and surface phase equilibria in molecular beam epitaxy
Growth kinetics of silicon films deposited by molecular beam epitaxy
Alternating current technology
Molecular beam epitaxy
Epitaxy of nanostructures
Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy
Growth of graphene/hexagonal boron nitride heterostructures using molecular beam epitaxy
Molecular Beam Epitaxy Growth of Topological Materials
Niederlande.- Amsterdam.- International Conference on Vapour Growth and Epitaxy
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Pseudo halide vapor phase epitaxy growth of GaN crystals
Growth instabilities of vicinal crystal surfaces during molecular beam epitaxy
Growth processes and surface phase equilibria in molecular beam epitaxy
Growth kinetics of silicon films deposited by molecular beam epitaxy
Alternating current technology
Molecular beam epitaxy
Epitaxy of nanostructures
Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy