High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy ; volume:5 ; number:1 ; day:14 ; month:9 ; year:2024 ; pages:1-6 ; date:12.2024
Communications materials ; 5, Heft 1 (14.9.2024), 1-6, 12.2024
- Urheber
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Makarovsky, Oleg
Hill, Richard J. A.
Cheng, Tin S.
Summerfield, Alex
Taniguchi, Takeshi
Watanabe, Kenji
Mellor, Christopher J.
Patanè, Amalia
Eaves, Laurence
Novikov, Sergei V.
Beton, Peter H.
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s43246-024-00633-x
- URN
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urn:nbn:de:101:1-2411282104221.555380600571
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:33 MESZ
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Beteiligte
- Makarovsky, Oleg
- Hill, Richard J. A.
- Cheng, Tin S.
- Summerfield, Alex
- Taniguchi, Takeshi
- Watanabe, Kenji
- Mellor, Christopher J.
- Patanè, Amalia
- Eaves, Laurence
- Novikov, Sergei V.
- Beton, Peter H.
- SpringerLink (Online service)
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