High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy ; volume:5 ; number:1 ; day:14 ; month:9 ; year:2024 ; pages:1-6 ; date:12.2024
Communications materials ; 5, Heft 1 (14.9.2024), 1-6, 12.2024

Creator
Makarovsky, Oleg
Hill, Richard J. A.
Cheng, Tin S.
Summerfield, Alex
Taniguchi, Takeshi
Watanabe, Kenji
Mellor, Christopher J.
Patanè, Amalia
Eaves, Laurence
Novikov, Sergei V.
Beton, Peter H.
Contributor
SpringerLink (Online service)

DOI
10.1038/s43246-024-00633-x
URN
urn:nbn:de:101:1-2411282104221.555380600571
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:33 AM CEST

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Associated

  • Makarovsky, Oleg
  • Hill, Richard J. A.
  • Cheng, Tin S.
  • Summerfield, Alex
  • Taniguchi, Takeshi
  • Watanabe, Kenji
  • Mellor, Christopher J.
  • Patanè, Amalia
  • Eaves, Laurence
  • Novikov, Sergei V.
  • Beton, Peter H.
  • SpringerLink (Online service)

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