Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN ; volume:14 ; number:1 ; day:20 ; month:6 ; year:2024 ; pages:1-9 ; date:12.2024
Scientific reports ; 14, Heft 1 (20.6.2024), 1-9, 12.2024

Creator
Kamiński, Paweł
Turos, Andrzej
Kozłowski, Roman
Stefańska-Skrobas, Kamila
Żelazko, Jarosław
Grzanka, Ewa
Contributor
SpringerLink (Online service)

DOI
10.1038/s41598-024-65142-w
URN
urn:nbn:de:101:1-2409160920561.765697944693
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:30 AM CEST

Data provider

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Associated

  • Kamiński, Paweł
  • Turos, Andrzej
  • Kozłowski, Roman
  • Stefańska-Skrobas, Kamila
  • Żelazko, Jarosław
  • Grzanka, Ewa
  • SpringerLink (Online service)

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