Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: AIP Advances 4, 097128 (2014). DOI:10.1063/1.4896284
- Klassifikation
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Physik
- Ereignis
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Veröffentlichung
- (wo)
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Würzburg
- (wer)
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Universität Würzburg
- (wann)
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2015
- Urheber
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Braun, T.
Schneider, Carsten
Maier, S.
Igusa, R.
Iwamoto, S.
Forchel, A.
Höfling, S.
Arakawa, Y.
Kamp, M.
- URN
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urn:nbn:de:bvb:20-opus-115448
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:55 MESZ
Datenpartner
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Beteiligte
- Braun, T.
- Schneider, Carsten
- Maier, S.
- Igusa, R.
- Iwamoto, S.
- Forchel, A.
- Höfling, S.
- Arakawa, Y.
- Kamp, M.
- Universität Würzburg
Entstanden
- 2015
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Quantum dots formed in a GaAsAlGaAs quantum ring
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Quantum dots formed in a GaAsAlGaAs quantum ring
MOCVD growth and laser applications of In(Ga)As-GaAS quantum dots
Picosecond spin-preserving carrier capture in InGaAs/GaAs quantum dots
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