Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
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Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates ; volume:13 ; number:1 ; day:22 ; month:8 ; year:2018 ; pages:1-7 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (22.8.2018), 1-7, 12.2018
- Creator
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Lin, Tao
- Contributor
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Zhou, Zhi Yan
Huang, Yao Min
Yang, Kun
Zhang, Bai Jun
Feng, Zhe Chuan
SpringerLink (Online service)
- DOI
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10.1186/s11671-018-2663-6
- URN
-
urn:nbn:de:101:1-2018101620314600553173
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:27 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Lin, Tao
- Zhou, Zhi Yan
- Huang, Yao Min
- Yang, Kun
- Zhang, Bai Jun
- Feng, Zhe Chuan
- SpringerLink (Online service)
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