- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells ; volume:12 ; number:1 ; day:21 ; month:2 ; year:2017 ; pages:1-6 ; date:12.2017
Nanoscale research letters ; 12, Heft 1 (21.2.2017), 1-6, 12.2017
- Classification
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Physik
- Creator
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Lin, Tao
- Contributor
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Kuo, Hao Chung
Jiang, Xiao Dong
Feng, Zhe Chuan
SpringerLink (Online service)
- DOI
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10.1186/s11671-017-1922-2
- URN
-
urn:nbn:de:1111-201703227636
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:59 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Lin, Tao
- Kuo, Hao Chung
- Jiang, Xiao Dong
- Feng, Zhe Chuan
- SpringerLink (Online service)
Other Objects (12)
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Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
Local charge carrier diffusion and recombination in InGaN quantum wells
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells
Local charge carrier diffusion and recombination in InGaN quantum wells : = Lokale Ladungsträgerdiffusion und -rekombination in InGaN Quantentrögen
Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Kohärente Intersubband-Dynamik in GaAs-AlGaAs-Quantum-Well-Strukturen
Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells
Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells
Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
Local charge carrier diffusion and recombination in InGaN quantum wells
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells
Local charge carrier diffusion and recombination in InGaN quantum wells : = Lokale Ladungsträgerdiffusion und -rekombination in InGaN Quantentrögen
Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Kohärente Intersubband-Dynamik in GaAs-AlGaAs-Quantum-Well-Strukturen
Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells
Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells
Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
Local charge carrier diffusion and recombination in InGaN quantum wells
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells
Local charge carrier diffusion and recombination in InGaN quantum wells : = Lokale Ladungsträgerdiffusion und -rekombination in InGaN Quantentrögen
Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Growth and characterization of cubic InGaN and InGaN/GaN quantum wells
Kohärente Intersubband-Dynamik in GaAs-AlGaAs-Quantum-Well-Strukturen