Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates ; volume:13 ; number:1 ; day:22 ; month:8 ; year:2018 ; pages:1-7 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (22.8.2018), 1-7, 12.2018
- Urheber
-
Lin, Tao
- Beteiligte Personen und Organisationen
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Zhou, Zhi Yan
Huang, Yao Min
Yang, Kun
Zhang, Bai Jun
Feng, Zhe Chuan
SpringerLink (Online service)
- DOI
-
10.1186/s11671-018-2663-6
- URN
-
urn:nbn:de:101:1-2018101620314600553173
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:27 MESZ
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Beteiligte
- Lin, Tao
- Zhou, Zhi Yan
- Huang, Yao Min
- Yang, Kun
- Zhang, Bai Jun
- Feng, Zhe Chuan
- SpringerLink (Online service)
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