Formation Processes and Interface Effects of Epitaxially Grown Two-Dimensional Materials
- Alternative title
-
Wachstumsprozesse und Grenzflächeneffekte von epitaktisch hergestellten zwei-dimensionalen Materialien
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
München, Technische Universität München, Dissertation, 2023
- Keyword
-
Röntgenspektroskopie
Kristallfläche
- Event
-
Veröffentlichung
- (where)
-
München
- (who)
-
Universitätsbibliothek der TU München
- (when)
-
2023
- Creator
-
Küchle, Johannes Thore
- Contributor
- URN
-
urn:nbn:de:bvb:91-diss-20230511-1700010-1-7
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:54 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Küchle, Johannes Thore
- Auwärter, Wilhelm
- Günther, Sebastian
- Universitätsbibliothek der TU München
Time of origin
- 2023
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Interface amorphization of two-dimensional black phosphorus upon the treatment with diazonium salts
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Diffusive processes in two-dimensional environments of membranes
Two-dimensional glass transition–like behavior of Janus particle–laden interface
Well-Posedness of the Two-Dimensional Compressible Plasma-Vacuum Interface Problem
Fabrication of two-dimensional polymers and two-dimensional materials
Two-Dimensional Truth
Interface Amorphization of Two‐Dimensional Black Phosphorus upon Treatment with Diazonium Salts
Coating two-dimensional MoS2 with polymer creates a corrosive non-uniform interface
Interface amorphization of two-dimensional black phosphorus upon the treatment with diazonium salts
Study of the Charge-Transfer Dynamics at the Interface of Two-Dimensional Materials
Controllable phase transition of two-dimensional ferromagnetic chromium telluride thin films grown by molecular beam epitaxy