Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2159-6867
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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online resource.
- Erschienen in
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Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature ; volume:5 ; number:2 ; day:4 ; month:5 ; year:2015 ; pages:297-301 ; date:6.2015
MRS communications / Materials Research Society ; 5, Heft 2 (4.5.2015), 297-301, 6.2015
- Urheber
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Mei, Y.
Zhang, C.
Vardeny, Z. V.
Jurchescu, O. D.
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1557/mrc.2015.21
- URN
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urn:nbn:de:101:1-2020111418313869443362
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 15.08.2025, 07:23 MESZ
Datenpartner
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Beteiligte
- Mei, Y.
- Zhang, C.
- Vardeny, Z. V.
- Jurchescu, O. D.
- SpringerLink (Online service)
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