Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2159-6867

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature ; volume:5 ; number:2 ; day:4 ; month:5 ; year:2015 ; pages:297-301 ; date:6.2015
MRS communications / Materials Research Society ; 5, Heft 2 (4.5.2015), 297-301, 6.2015

Creator: Mei, Y.
Zhang, C.
Vardeny, Z. V.
Jurchescu, O. D.

Contributor: SpringerLink (Online service)

DOI: 10.1557/mrc.2015.21

URN: urn:nbn:de:101:1-2020111418313869443362

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:23 AM CEST

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Mei, Y.
Zhang, C.
Vardeny, Z. V.
Jurchescu, O. D.
SpringerLink (Online service)

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Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

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Other Objects (12)

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