Room temperature valley polarization via spin selective charge transfer

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Room temperature valley polarization via spin selective charge transfer ; volume:14 ; number:1 ; day:26 ; month:8 ; year:2023 ; pages:1-9 ; date:12.2023
Nature Communications ; 14, Heft 1 (26.8.2023), 1-9, 12.2023

Creator: Shrestha, Shreetu
Li, Mingxing
Park, Suji
Tong, Xiao
DiMarzio, Donald
Cotlet, Mircea

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41467-023-40967-7

URN: urn:nbn:de:101:1-2024020510182911124199

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:22 AM CEST

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Shrestha, Shreetu
Li, Mingxing
Park, Suji
Tong, Xiao
DiMarzio, Donald
Cotlet, Mircea
SpringerLink (Online service)

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Room temperature valley polarization via spin selective charge transfer

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Other Objects (12)

Robust Layer‐Dependent Valley Polarization and Valley Coherence in Spiral WS 2 at Room Temperature

Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers

Polarization superposition of room-temperature polariton condensation

Creating Wavelength‐Selective Polarization Digital Numbers

Color-selective three-dimensional polarization structures

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS 2 Achieved by Electrochemical Intercalation

Charge and polarization dynamics in polymer films

Room-temperature valley coherence in a polaritonic system

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers

Inverted valley polarization in optically excited transition metal dichalcogenides

Room-temperature valley transistors for low-power neuromorphic computing

Robust Layer‐Dependent Valley Polarization and Valley Coherence in Spiral WS 2 at Room Temperature

Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers

Polarization superposition of room-temperature polariton condensation

Creating Wavelength‐Selective Polarization Digital Numbers

Color-selective three-dimensional polarization structures

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS 2 Achieved by Electrochemical Intercalation

Charge and polarization dynamics in polymer films

Room-temperature valley coherence in a polaritonic system

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers

Inverted valley polarization in optically excited transition metal dichalcogenides

Room-temperature valley transistors for low-power neuromorphic computing

Robust Layer‐Dependent Valley Polarization and Valley Coherence in Spiral WS 2 at Room Temperature

Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers

Polarization superposition of room-temperature polariton condensation

Creating Wavelength‐Selective Polarization Digital Numbers

Color-selective three-dimensional polarization structures

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS 2 Achieved by Electrochemical Intercalation

Charge and polarization dynamics in polymer films

Room-temperature valley coherence in a polaritonic system

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers

Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayers

Inverted valley polarization in optically excited transition metal dichalcogenides

Room-temperature valley transistors for low-power neuromorphic computing

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