Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators ; volume:8 ; number:1 ; day:19 ; month:3 ; year:2024 ; pages:1-10 ; date:12.2024
npj 2D materials and applications ; 8, Heft 1 (19.3.2024), 1-10, 12.2024

Creator
Illarionov, Yury
Knobloch, Theresia
Uzlu, B.
Banshchikov, A. G.
Ivanov, I. A.
Sverdlov, Viktor
Otto, M.
Stoll, S. L.
Vexler, M. I.
Waltl, Michael
Wang, Z.
Manna, B.
Neumaier, Daniel
Lemme, M. C.
Sokolov, N. S.
Grasser, Tibor
Contributor
SpringerLink (Online service)

DOI
10.1038/s41699-024-00461-0
URN
urn:nbn:de:101:1-2405211145410.622407113954
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:44 AM CEST

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