Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators ; volume:8 ; number:1 ; day:19 ; month:3 ; year:2024 ; pages:1-10 ; date:12.2024
npj 2D materials and applications ; 8, Heft 1 (19.3.2024), 1-10, 12.2024
- Creator
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Illarionov, Yury
Knobloch, Theresia
Uzlu, B.
Banshchikov, A. G.
Ivanov, I. A.
Sverdlov, Viktor
Otto, M.
Stoll, S. L.
Vexler, M. I.
Waltl, Michael
Wang, Z.
Manna, B.
Neumaier, Daniel
Lemme, M. C.
Sokolov, N. S.
Grasser, Tibor
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41699-024-00461-0
- URN
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urn:nbn:de:101:1-2405211145410.622407113954
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:44 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Illarionov, Yury
- Knobloch, Theresia
- Uzlu, B.
- Banshchikov, A. G.
- Ivanov, I. A.
- Sverdlov, Viktor
- Otto, M.
- Stoll, S. L.
- Vexler, M. I.
- Waltl, Michael
- Wang, Z.
- Manna, B.
- Neumaier, Daniel
- Lemme, M. C.
- Sokolov, N. S.
- Grasser, Tibor
- SpringerLink (Online service)