Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Umfang
-
Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application ; volume:15 ; number:1 ; day:9 ; month:12 ; year:2020 ; pages:1-12 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (9.12.2020), 1-12, 12.2020
- Urheber
-
Li, Chen
Lin, Hongxiao
Li, Junjie
Yin, Xiaogen
Zhang, Yongkui
Kong, Zhenzhen
Wang, Guilei
Zhu, Huilong
Radamson, Henry H.
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-020-03456-0
- URN
-
urn:nbn:de:101:1-2021011714565312946526
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:33 MESZ
Datenpartner
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Beteiligte
- Li, Chen
- Lin, Hongxiao
- Li, Junjie
- Yin, Xiaogen
- Zhang, Yongkui
- Kong, Zhenzhen
- Wang, Guilei
- Zhu, Huilong
- Radamson, Henry H.
- SpringerLink (Online service)
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