Characterization of damage morphology of structural SiO 2 film induced by nanosecond pulsed laser
Abstract: We investigated the damage morphology of porous silicon oxide film with a periodic hexagonal hole array irradiated by nanosecond pulsed laser, both experimentally and numerically. To understand the damage morphology, the temperature field distribution and the thermal stress distribution during the laser radiation process were investigated by finite element method. The simulation results show that the thermal stress regulated by periodic structural surface is the reason for the circumferential and discrete distribution of the damage points. The results provide ideas for improving the laser damage resistance of the structural surfaces.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Characterization of damage morphology of structural SiO 2 film induced by nanosecond pulsed laser ; volume:20 ; number:1 ; year:2022 ; pages:724-729 ; extent:6
Open physics ; 20, Heft 1 (2022), 724-729 (gesamt 6)
- Creator
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Li, Yuan
Su, Junhong
Xu, Junqi
Yang, Guoliang
- DOI
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10.1515/phys-2022-0060
- URN
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urn:nbn:de:101:1-2022072818503575624520
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:25 AM CEST
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Associated
- Li, Yuan
- Su, Junhong
- Xu, Junqi
- Yang, Guoliang
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