Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors ; volume:8 ; number:1 ; day:13 ; month:7 ; year:2018 ; pages:1-10 ; date:12.2018
Scientific reports ; 8, Heft 1 (13.7.2018), 1-10, 12.2018

Classification: Physik

Creator: Oi, Nobutaka

Contributor: Inaba, Masafumi
Okubo, Satoshi
Tsuyuzaki, Ikuto
Kageura, Taisuke
Onoda, Shinobu
Hiraiwa, Atsushi
Kawarada, Hiroshi
SpringerLink (Online service)

DOI: 10.1038/s41598-018-28837-5

URN: urn:nbn:de:101:1-2018091322093757704043

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:34 AM CEST

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Associated

Oi, Nobutaka
Inaba, Masafumi
Okubo, Satoshi
Tsuyuzaki, Ikuto
Kageura, Taisuke
Onoda, Shinobu
Hiraiwa, Atsushi
Kawarada, Hiroshi
SpringerLink (Online service)

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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

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Other Objects (12)

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