High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond ; day:19 ; month:01 ; year:2024 ; extent:8
Advanced science ; (19.01.2024) (gesamt 8)
- Urheber
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Liao, Meiyong
Sun, Huanying
Koizumi, Satoshi
- DOI
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10.1002/advs.202306013
- URN
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urn:nbn:de:101:1-2024012014101746341634
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:34 MESZ
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Beteiligte
- Liao, Meiyong
- Sun, Huanying
- Koizumi, Satoshi
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