Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors ; day:12 ; month:08 ; year:2024 ; extent:10
Advanced electronic materials ; (12.08.2024) (gesamt 10)
- Urheber
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Sleziona, Stephan
Kharsah, Osamah
Skopinski, Lucia
Daniel, Leon
Schmeink, Jennifer
Schleberger, Marika
- DOI
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10.1002/aelm.202400318
- URN
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urn:nbn:de:101:1-2408131419104.499891023091
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 11:00 MESZ
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Beteiligte
- Sleziona, Stephan
- Kharsah, Osamah
- Skopinski, Lucia
- Daniel, Leon
- Schmeink, Jennifer
- Schleberger, Marika
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