Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors ; day:12 ; month:08 ; year:2024 ; extent:10
Advanced electronic materials ; (12.08.2024) (gesamt 10)

Creator

DOI
10.1002/aelm.202400318
URN
urn:nbn:de:101:1-2408131419104.499891023091
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 11:00 AM CEST

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