Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors ; day:12 ; month:08 ; year:2024 ; extent:10
Advanced electronic materials ; (12.08.2024) (gesamt 10)
- Creator
-
Sleziona, Stephan
Kharsah, Osamah
Skopinski, Lucia
Daniel, Leon
Schmeink, Jennifer
Schleberger, Marika
- DOI
-
10.1002/aelm.202400318
- URN
-
urn:nbn:de:101:1-2408131419104.499891023091
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 11:00 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sleziona, Stephan
- Kharsah, Osamah
- Skopinski, Lucia
- Daniel, Leon
- Schmeink, Jennifer
- Schleberger, Marika