Hochschulschrift
The dangling-bond defect in silicon : insights into electronic and structural effects from first-principles calculations of the EPR-parameters
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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31 cm
- Extent
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117 S.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
Paderborn, Univ., Diss., 2012
- Creator
- Table of contents
- Rights
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Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
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11.06.2025, 1:41 PM CEST
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Object type
- Hochschulschrift
Associated
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