Ferroelectric Domain Wall Memristor
Abstract: A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric‐field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Ferroelectric Domain Wall Memristor ; volume:30 ; number:28 ; year:2020 ; extent:8
Advanced functional materials ; 30, Heft 28 (2020) (gesamt 8)
- Creator
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McConville, James P. V.
Lu, Haidong
Wang, Bo
Tan, Yueze
Cochard, Charlotte
Conroy, Michele
Moore, Kalani
Harvey, Alan
Bangert, Ursel
Chen, Long‐Qing
Gruverman, Alexei
Gregg, Marty
- DOI
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10.1002/adfm.202000109
- URN
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urn:nbn:de:101:1-2022060907521748144996
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:23 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- McConville, James P. V.
- Lu, Haidong
- Wang, Bo
- Tan, Yueze
- Cochard, Charlotte
- Conroy, Michele
- Moore, Kalani
- Harvey, Alan
- Bangert, Ursel
- Chen, Long‐Qing
- Gruverman, Alexei
- Gregg, Marty
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