A Physical Synthesis Flow for Early Technology Evaluation of Silicon Nanowire based Reconfigurable FETs
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
In: Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), Herausgeber: Institute of Electrical and Electronics Engineers (IEEE), Erscheinungsort: New York, NY, Verlag: IEEE, Erscheinungsjahr: 2018, Seiten: 605-608
- Klassifikation
-
Elektrotechnik, Elektronik
- Ereignis
-
Veröffentlichung
- (wo)
-
Dresden
- (wer)
-
Technische Universität Dresden
- (wann)
-
2021
- Urheber
-
Rai, Shubham
Rupani, Ansh
Walter, Dennis
Raitza, Michael
Heinzig, Andrè
Baldauf, Tim
Trommer, Jens
Mayr, Christian
Weber, Walter M.
Kumar, Akash
- URN
-
urn:nbn:de:bsz:14-qucosa2-768351
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:49 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Rai, Shubham
- Rupani, Ansh
- Walter, Dennis
- Raitza, Michael
- Heinzig, Andrè
- Baldauf, Tim
- Trommer, Jens
- Mayr, Christian
- Weber, Walter M.
- Kumar, Akash
- Technische Universität Dresden
Entstanden
- 2021
Ähnliche Objekte (12)
Reconfigurable Si Nanowire Nonvolatile Transistors
Vertically Integrated Reconfigurable Nanowire Arrays
Nanoscale Material Characterization of Silicon Nanowires for Application in Reconfigurable Nanowire Transistors
Top-down fabrication of reconfigurable nanowire-electronics
Strained and unstrained silicon nanowire-array MOSFETs : fabrication and physical analysis
Strained and unstrained silicon nanowire-array MOSFETs : fabrication and physical analysis
Silicon nanowire structures forneuronal cell interfacing
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Analytical Exploration and Quantification of Nanowire-based Reconfigurable Digital Circuits
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained silicon and silicon germanium nanowire tunnel FETs and inverters
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Reconfigurable Si Nanowire Nonvolatile Transistors
Vertically Integrated Reconfigurable Nanowire Arrays
Nanoscale Material Characterization of Silicon Nanowires for Application in Reconfigurable Nanowire Transistors
Top-down fabrication of reconfigurable nanowire-electronics
Strained and unstrained silicon nanowire-array MOSFETs : fabrication and physical analysis
Strained and unstrained silicon nanowire-array MOSFETs : fabrication and physical analysis
Silicon nanowire structures forneuronal cell interfacing
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Analytical Exploration and Quantification of Nanowire-based Reconfigurable Digital Circuits
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained silicon and silicon germanium nanowire tunnel FETs and inverters
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Reconfigurable Si Nanowire Nonvolatile Transistors
Vertically Integrated Reconfigurable Nanowire Arrays
Nanoscale Material Characterization of Silicon Nanowires for Application in Reconfigurable Nanowire Transistors
Top-down fabrication of reconfigurable nanowire-electronics
Strained and unstrained silicon nanowire-array MOSFETs : fabrication and physical analysis
Strained and unstrained silicon nanowire-array MOSFETs : fabrication and physical analysis
Silicon nanowire structures forneuronal cell interfacing
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
Analytical Exploration and Quantification of Nanowire-based Reconfigurable Digital Circuits
Strained silicon and silicon-germanium nanowire tunnel FETs and inverters
Strained silicon and silicon germanium nanowire tunnel FETs and inverters