Nanoheteroepitaxy of Indium Phosphide Nanostructures on CMOS-Si using Gas-Source Molecular-Beam Epitaxy
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Berlin, Humboldt-Universität zu Berlin, Dissertation, 2024
- Schlagwort
-
Indiumphosphid
Nanostruktur
Drei-Fünf-Halbleiter
Photolumineszenz
- Ereignis
-
Veröffentlichung
- (wo)
-
Berlin
- (wer)
-
Humboldt-Universität zu Berlin
- (wann)
-
2025
- Urheber
- Beteiligte Personen und Organisationen
-
Hatami, Fariba
Engel-Herbert, Roman
Borgström, Magnus
- DOI
-
10.18452/31248
- URN
-
urn:nbn:de:kobv:11-110-18452/31852-6
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:30 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Kamath, Anagha
- Hatami, Fariba
- Engel-Herbert, Roman
- Borgström, Magnus
- Humboldt-Universität zu Berlin
Entstanden
- 2025
Ähnliche Objekte (12)
Epitaxy of nanostructures
Indium phosphide metasurface with enhanced nonlinear absorption
Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon
Nanomechanical Systems Based on Tensile-Stressed Crystalline Indium Gallium Phosphide
Conference proceedings / 23rd International Conference on Indium Phosphide and Related Materials
Synthesis of super bright indium phosphide colloidal quantum dots through thermal diffusion
Indium gallium nitride nanostructures for optoelectronic applications
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz
Indium phosphide quantum dots in GaP and in In0.48Ga0.52P : growth and properties
Accelerated Multi‐Stage Synthesis of Indium Phosphide Quantum Dots in Modular Flow Reactors
3D molecular structural modeling and characterization of indium phosphide via irregularity topological indices
Indium phosphide quantum dots in GaP and in In0.48Ga0.52P : growth and properties
Epitaxy of nanostructures
Indium phosphide metasurface with enhanced nonlinear absorption
Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon
Nanomechanical Systems Based on Tensile-Stressed Crystalline Indium Gallium Phosphide
Conference proceedings / 23rd International Conference on Indium Phosphide and Related Materials
Synthesis of super bright indium phosphide colloidal quantum dots through thermal diffusion
Indium gallium nitride nanostructures for optoelectronic applications
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz
Indium phosphide quantum dots in GaP and in In0.48Ga0.52P : growth and properties
Accelerated Multi‐Stage Synthesis of Indium Phosphide Quantum Dots in Modular Flow Reactors
3D molecular structural modeling and characterization of indium phosphide via irregularity topological indices
Indium phosphide quantum dots in GaP and in In0.48Ga0.52P : growth and properties
Epitaxy of nanostructures
Indium phosphide metasurface with enhanced nonlinear absorption
Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon
Nanomechanical Systems Based on Tensile-Stressed Crystalline Indium Gallium Phosphide
Conference proceedings / 23rd International Conference on Indium Phosphide and Related Materials
Synthesis of super bright indium phosphide colloidal quantum dots through thermal diffusion
Indium gallium nitride nanostructures for optoelectronic applications
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz
Indium phosphide quantum dots in GaP and in In0.48Ga0.52P : growth and properties
Accelerated Multi‐Stage Synthesis of Indium Phosphide Quantum Dots in Modular Flow Reactors
3D molecular structural modeling and characterization of indium phosphide via irregularity topological indices