Unified model for p-n junction current-voltage characteristics
Abstract: Current-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Unified model for p-n junction current-voltage characteristics ; volume:1 ; number:1 ; year:2011 ; pages:113-116 ; extent:4
Open engineering ; 1, Heft 1 (2011), 113-116 (gesamt 4)
- Urheber
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Cristea, Miron
- DOI
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10.2478/s13531-011-0006-9
- URN
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urn:nbn:de:101:1-2412141615355.634399340181
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:21 MESZ
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Beteiligte
- Cristea, Miron
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