Hochschulschrift
Supercritical Si1-xGex alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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II, 145 S.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Zugl.: Aachen, Techn. Hochsch., Diss., 2001
- Bibliographic citation
-
Berichte des Forschungszentrums Jülich / Forschungszentrum Jülich ; 3890
- Event
-
Veröffentlichung
- (where)
-
Jülich
- (who)
-
Forschungszentrum, Zentralbibliothek
- (when)
-
2001
- Creator
-
Grimm, Karsten
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 1:45 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Grimm, Karsten
- Forschungszentrum, Zentralbibliothek
Time of origin
- 2001
Other Objects (12)
Gex
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
Studies of AlN grown by MOVPE for electronic and optoelectronic applications
X‐ray characterization of physical‐vapor‐transport‐grown bulk AlN single crystals
Optoelectronic properties of GaN nanostructures and novel II-III oxynitrides grown by molecular beam epitaxy
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy
Histoire du pays de Gex
Recrystallization of MBE‐Grown MoS2 Monolayers Induced by Annealing in a Chemical Vapor Deposition Furnace
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Advanced optoelectronic devices
Defektzustände in amorphen Silizium-Germanium-Legierungen (a-Si1-xGex:H [a-SixGexH])
Gex
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
Studies of AlN grown by MOVPE for electronic and optoelectronic applications
X‐ray characterization of physical‐vapor‐transport‐grown bulk AlN single crystals
Optoelectronic properties of GaN nanostructures and novel II-III oxynitrides grown by molecular beam epitaxy
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy
Histoire du pays de Gex
Recrystallization of MBE‐Grown MoS2 Monolayers Induced by Annealing in a Chemical Vapor Deposition Furnace
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Advanced optoelectronic devices
Defektzustände in amorphen Silizium-Germanium-Legierungen (a-Si1-xGex:H [a-SixGexH])
Gex
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
Studies of AlN grown by MOVPE for electronic and optoelectronic applications
X‐ray characterization of physical‐vapor‐transport‐grown bulk AlN single crystals
Optoelectronic properties of GaN nanostructures and novel II-III oxynitrides grown by molecular beam epitaxy
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Self-assembled (Al)GaInN quantum dots grown by metalorganic vapor phase epitaxy
Histoire du pays de Gex
Recrystallization of MBE‐Grown MoS2 Monolayers Induced by Annealing in a Chemical Vapor Deposition Furnace
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Advanced optoelectronic devices