Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts ; day:04 ; month:05 ; year:2021 ; extent:9
Advanced electronic materials ; (04.05.2021) (gesamt 9)
- Urheber
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Sistani, Masiar
Behrle, Raphael
Wind, Lukas
Eysin, Kilian
Maeder, Xavier
Schweizer, Peter
Michler, Johann
Lugstein, Alois
Weber, Walter M.
- DOI
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10.1002/aelm.202100101
- URN
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urn:nbn:de:101:1-2021050415313851268312
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 11:02 MESZ
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Beteiligte
- Sistani, Masiar
- Behrle, Raphael
- Wind, Lukas
- Eysin, Kilian
- Maeder, Xavier
- Schweizer, Peter
- Michler, Johann
- Lugstein, Alois
- Weber, Walter M.
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