Peter Wellmann
Physiker
Geboren:
1966
Hat mitgewirkt an:
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Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
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Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC
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Synthesis and Characterization of BaZrS 3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS 3 on Zirconium Foil and Silicon Carbide Substrates
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Anregung der Seltenen Erden Erbium und Ytterbium in den Verbindungshalbleitern InP und InGaAsP