Agnieszka Paszuk
Geboren:
1987
Hat mitgewirkt an:
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Controlling Si(111) and Si(100) surfaces for subsequent GaP heteroepitaxy in CVD ambient
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Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO 2 Interface
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Dangling Bond Defects on Si Surfaces and Their Consequences on Energy Band Diagrams: From a Photoelectrochemical Perspective
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In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)