Hochschulschrift
Molecular beam epitaxy of GaAs nanowires and their suitability for optoelectronic applications : comparing Au- and self-assisted growth methods
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Maße
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30 cm
- Umfang
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X, 127 S.
- Sprache
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Englisch
- Anmerkungen
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Ill., graph. Darst.
Berlin, Humboldt-Univ., Diss., 2011 (Nicht für den Austausch)
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.03.2025, 12:07 MEZ
Datenpartner
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Objekttyp
- Hochschulschrift
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