Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Photo-engineered optoelectronic properties of indium tin oxide via reactive laser annealing ; volume:12 ; number:1 ; day:2 ; month:9 ; year:2022 ; pages:1-12 ; date:12.2022
Scientific reports ; 12, Heft 1 (2.9.2022), 1-12, 12.2022
- Creator
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Hillier, James Arthur
Patsalas, Panos
Karfaridis, Dimitrios
Camelio, Sophie
Cranton, Wayne
Nabok, Alexei V.
Mellor, Christopher J.
Koutsogeorgis, Demosthenes C.
Kalfagiannis, Nikolaos
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-022-18883-5
- URN
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urn:nbn:de:101:1-2022112009090479170236
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:23 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hillier, James Arthur
- Patsalas, Panos
- Karfaridis, Dimitrios
- Camelio, Sophie
- Cranton, Wayne
- Nabok, Alexei V.
- Mellor, Christopher J.
- Koutsogeorgis, Demosthenes C.
- Kalfagiannis, Nikolaos
- SpringerLink (Online service)