Ultrafast, Broadband Photodetector Based on MoSe 2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Ultrafast, Broadband Photodetector Based on MoSe 2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode ; volume:3 ; number:11 ; year:2016 ; extent:9
Advanced science ; 3, Heft 11 (2016) (gesamt 9)
- Creator
- DOI
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10.1002/advs.201600018
- URN
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urn:nbn:de:101:1-2022110707262429350443
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:36 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Mao, Jie
- Yu, Yongqiang
- Wang, Liu
- Zhang, Xiujuan
- Wang, Yuming
- Shao, Zhibin
- Jie, Jiansheng
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