Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time

Abstract: The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high‐frequency applications still requires the clarification of the dominant mechanisms and inherent limitations of ultra‐fast resistive switching. Here bipolar, multilevel resistive switchings are investigated in tantalum pentoxide based memristors with picosecond time resolution. Cyclic resistive switching operation due to 20 ps long voltage pulses of alternating polarity are experimentally demonstrated. The analysis of the real‐time response of the memristor reveals that the set switching can take place at the picosecond time‐scale where it is only compromised by the bandwidth limitations of the experimental setup. In contrast, the completion of the reset transitions significantly exceeds the duration of the ultra‐short voltage bias, demonstrating the dominant role of thermal diffusion and underlining the importance of dedicated thermal engineering for future high‐frequency memristor circuit applications.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time ; day:17 ; month:04 ; year:2023 ; extent:12
Advanced electronic materials ; (17.04.2023) (gesamt 12)

Urheber
Csontos, Miklós
Horst, Yannik
Olalla, Nadia Jimenez
Koch, Ueli
Shorubalko, Ivan
Halbritter, András
Leuthold, Juerg

DOI
10.1002/aelm.202201104
URN
urn:nbn:de:101:1-2023041815235755264630
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
14.08.2025, 10:46 MESZ

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