Efficient gating of epitaxial boron nitride monolayers by substrate functionalization
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Physical review B ; 12 ; 92 APS Physics
- Klassifikation
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Physik
- Ereignis
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Veröffentlichung
- (wo)
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Köln
- (wer)
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Universitäts- und Stadtbibliothek Köln
- (wann)
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2015
- Urheber
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Fedorov, A.
Praveen, C. S.
Verbitskiy, N. I.
Haberer, D.
Usachov, D.
Vyalikh, D. V.
Nefedov, A.
Woll, C.
Petaccia, L.
Piccinin, S.
Sachdev, H.
Knupfer, M.
Buchner, B.
Fabris, S.
Gruneis, A.
- URN
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urn:nbn:de:hbz:38-81470
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:48 MEZ
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Beteiligte
- Fedorov, A.
- Praveen, C. S.
- Verbitskiy, N. I.
- Haberer, D.
- Usachov, D.
- Vyalikh, D. V.
- Nefedov, A.
- Woll, C.
- Petaccia, L.
- Piccinin, S.
- Sachdev, H.
- Knupfer, M.
- Buchner, B.
- Fabris, S.
- Gruneis, A.
- Universitäts- und Stadtbibliothek Köln
Entstanden
- 2015
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