Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Erschienen in
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Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors ; volume:5 ; pages:964-972
Beilstein journal of nanotechnology ; 5, 964-972
- Klassifikation
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Ingenieurwissenschaften und Maschinenbau
- DOI
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10.3762/bjnano.5.110
- URN
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urn:nbn:de:101:1-20150127943
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:21 MESZ
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