Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch

References and Relationships

• Bibliographic citation: Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications ; volume:3 ; number:11 ; year:2016 ; extent:23 ; Advanced science ; 3, Heft 11 (2016) (gesamt 23)

Contributors, Places and Time

• Creator: Li, Menglin ; Liu, Donghua ; Wei, Dacheng ; Song, Xuefen ; Wei, Dapeng ; Wee, Andrew T. S.

Further information

• DOI: 10.1002/advs.201600003
• URN: urn:nbn:de:101:1-2022110707212521644988
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 15.08.2025, 7:23 AM CEST