- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
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Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Evolution of wetting layer in InAs/GaAs quantum dot system ; volume:1 ; number:1 ; day:26 ; month:7 ; year:2006 ; pages:79-83 ; date:6.2006
Nanoscale research letters ; 1, Heft 1 (26.7.2006), 79-83, 6.2006
- Creator
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Chen, Y.H
Ye, X.L
Wang, Z.G
- Contributor
-
SpringerLink (Online service)
- DOI
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10.1007/s11671-006-9013-9
- URN
-
urn:nbn:de:101:1-2021082820512482052622
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:35 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Chen, Y.H
- Ye, X.L
- Wang, Z.G
- SpringerLink (Online service)
Other Objects (12)
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
Modulated InGaAs/GaAs quantum dot lasers
Dynamic properties of InGaAs-GaAs quantum dot lasers
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
Electronic States in Three Dimensional Quantum Dot, Wetting Layer Structures
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
Molecular beam epitaxy of tailored (In,Ga)As/GaAs quantum dot heterostructures
Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory
Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
Modulated InGaAs/GaAs quantum dot lasers
Dynamic properties of InGaAs-GaAs quantum dot lasers
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
Electronic States in Three Dimensional Quantum Dot, Wetting Layer Structures
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
Molecular beam epitaxy of tailored (In,Ga)As/GaAs quantum dot heterostructures
Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory
Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
Modulated InGaAs/GaAs quantum dot lasers
Dynamic properties of InGaAs-GaAs quantum dot lasers
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
Electronic States in Three Dimensional Quantum Dot, Wetting Layer Structures
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
Molecular beam epitaxy of tailored (In,Ga)As/GaAs quantum dot heterostructures
Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory
Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot