Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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1 Online-Ressource.
- Language
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Englisch
- Bibliographic citation
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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2 ; volume:43 ; number:7 ; day:25 ; month:4 ; year:2024 ; pages:3242-3249 ; date:7.2024
Rare metals / Zhongguo-Youse-Jinshu-Xuehui ; 43, Heft 7 (25.4.2024), 3242-3249, 7.2024
- Classification
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Elektrotechnik, Elektronik
- Creator
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Zhang, Zhao-Hao
Luo, Yan-Na
Xu, Gao-Bo
Yao, Jia-Xin
Wu, Zhen-Hua
Zhao, Hong-Bin
Zhang, Qing-Zhu
Yin, Hua-Xiang
Luo, Jun
Wang, Wen-Wu
Tu, Hai-Ling
- Contributor
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SpringerLink (Online service)
- DOI
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10.1007/s12598-024-02674-0
- URN
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urn:nbn:de:101:1-2408060957552.884364603008
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 10:44 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zhang, Zhao-Hao
- Luo, Yan-Na
- Xu, Gao-Bo
- Yao, Jia-Xin
- Wu, Zhen-Hua
- Zhao, Hong-Bin
- Zhang, Qing-Zhu
- Yin, Hua-Xiang
- Luo, Jun
- Wang, Wen-Wu
- Tu, Hai-Ling
- SpringerLink (Online service)