Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2 ; volume:43 ; number:7 ; day:25 ; month:4 ; year:2024 ; pages:3242-3249 ; date:7.2024
Rare metals / Zhongguo-Youse-Jinshu-Xuehui ; 43, Heft 7 (25.4.2024), 3242-3249, 7.2024

Classification
Elektrotechnik, Elektronik

Creator
Zhang, Zhao-Hao
Luo, Yan-Na
Xu, Gao-Bo
Yao, Jia-Xin
Wu, Zhen-Hua
Zhao, Hong-Bin
Zhang, Qing-Zhu
Yin, Hua-Xiang
Luo, Jun
Wang, Wen-Wu
Tu, Hai-Ling
Contributor
SpringerLink (Online service)

DOI
10.1007/s12598-024-02674-0
URN
urn:nbn:de:101:1-2408060957552.884364603008
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:44 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Associated

  • Zhang, Zhao-Hao
  • Luo, Yan-Na
  • Xu, Gao-Bo
  • Yao, Jia-Xin
  • Wu, Zhen-Hua
  • Zhao, Hong-Bin
  • Zhang, Qing-Zhu
  • Yin, Hua-Xiang
  • Luo, Jun
  • Wang, Wen-Wu
  • Tu, Hai-Ling
  • SpringerLink (Online service)

Other Objects (12)