Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS 2 /MoTe 2 Heterostructures

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Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS 2 /MoTe 2 Heterostructures ; year:2021
Advanced science ; (2021)

Creator
Kim, Jihoon
Venkatesan, A.
Kim, Hanul
Kim, Yewon
Whang, Dongmok
Kim, Gil‐Ho

DOI
10.1002/advs.202100102
URN
urn:nbn:de:101:1-2021031514051919229136
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:21 AM CEST

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Associated

  • Kim, Jihoon
  • Venkatesan, A.
  • Kim, Hanul
  • Kim, Yewon
  • Whang, Dongmok
  • Kim, Gil‐Ho

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