Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors
Abstract: Organic electrochemical transistors (OECTs) based on Poly (3,4‐ethylenedioxythiophene):poly (styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the ionic‐electronic transduction yield excellent potential for the field of implantable or wearable sensing technology. However, depletion‐mode operation PEDOT:PSS‐based OECTs cause high static power dissipation in electronic circuits, limiting their application in electronic systems. Hence, having control over the threshold voltage is of utmost technological importance. Here, PEDOT:PSS‐based dual‐gate OECTs with solid‐state electrolyte where the threshold voltage is seamlessly adjustable during operation are demonstrated. It is shown that the degree of threshold voltage tuning linearly depends on the gate capacitance, which is a straightforward approach for circuit designers to adjust the threshold voltage only by the device dimensions. The PEDOT:PSS‐based dual‐gate OECTs show excellent device performance and can be pushed to accumulation‐mode operation, resulting in a simplified and relaxed design of complementary inverters.
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Threshold Voltage Control in Dual‐Gate Organic Electrochemical Transistors ; day:26 ; month:10 ; year:2022 ; extent:7
Advanced materials interfaces ; (26.10.2022) (gesamt 7)
- Creator
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Tseng, Hsin
Weissbach, Anton
Kucinski, Juzef
Solgi, Ali
Nair, Rakesh
Bongartz, Lukas M.
Ciccone, Giuseppe
Cucchi, Matteo
Leo, Karl
Kleemann, Hans
- DOI
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10.1002/admi.202201914
- URN
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urn:nbn:de:101:1-2022102715161320830828
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:28 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Tseng, Hsin
- Weissbach, Anton
- Kucinski, Juzef
- Solgi, Ali
- Nair, Rakesh
- Bongartz, Lukas M.
- Ciccone, Giuseppe
- Cucchi, Matteo
- Leo, Karl
- Kleemann, Hans
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Relaxation von Elektron-Loch-Plasmen in drei- und quasi-zweidimensionalen Halbleiterstrukturen
Dynamics of coherent optical excitations in semiconductor heterostructures
High field transport in semiconductor superlattices
A Review of Vertical Organic Transistors
Mechanically Flexible and Electrically Stable Organic Permeable Base Transistors
Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes
A Novel Approach for Doped Organic Transistors and Heterostructure Devices
Organic Thin-Film Transistors : Characterization, Simulation and Stability
Contact Doping for Vertical Organic Field‐Effect Transistors
A Vertical C60 Transistor with a Permeable Base Electrode
The Organic Permeable Base Transistor : Operation Principle and Optimizations
Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors
Relaxation von Elektron-Loch-Plasmen in drei- und quasi-zweidimensionalen Halbleiterstrukturen
Dynamics of coherent optical excitations in semiconductor heterostructures
High field transport in semiconductor superlattices
A Review of Vertical Organic Transistors
Mechanically Flexible and Electrically Stable Organic Permeable Base Transistors
Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes
A Novel Approach for Doped Organic Transistors and Heterostructure Devices
Organic Thin-Film Transistors : Characterization, Simulation and Stability
Contact Doping for Vertical Organic Field‐Effect Transistors
A Vertical C60 Transistor with a Permeable Base Electrode