Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses ; day:13 ; month:07 ; year:2022 ; extent:11
Advanced electronic materials ; (13.07.2022) (gesamt 11)
- Urheber
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Khanas, Anton
Hebert, Christian
Becerra, Loïc
Portier, Xavier
Jedrecy, Nathalie
- DOI
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10.1002/aelm.202200421
- URN
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urn:nbn:de:101:1-2022071415060782565653
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:36 MESZ
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Beteiligte
- Khanas, Anton
- Hebert, Christian
- Becerra, Loïc
- Portier, Xavier
- Jedrecy, Nathalie
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