Hochschulschrift
Raman scattering by phonons in wide gap II - VI compounds, heterostructures, and interfaces
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
21 cm
- Umfang
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IV, 105 S.
- Sprache
-
Englisch
- Anmerkungen
-
graph. Darst.
Würzburg, Univ., Diss., 2000
- Schlagwort
-
Zwei-Sechs-Halbleiter
Wide-bandgap Halbleiter
Photon-Phonon-Wechselwirkung
Raman-Effekt
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.03.2025, 11:37 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
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